smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features n-channel sot-23 absolute maximum ratings ta = 25 parameter symbol rating unit drain-to-source voltage v dss 50 v gate-to-source voltage - continuous v gs 20 v drain current continuous @ t a =25 i d 200 ma pulsed drain current (tp 10 s) i dm 800 ma total power dissipation @ t a =25 p d 225 mw operating and storage temperature range t j ,t stg -55to150 thermal resistance,junction-to-ambient r ja 556 /w maximum lead temperature for soldering purposes, for 10 seconds t l 260 power mosfet 200 ma, 50 v KSS138 1gate 2 source 3drain www.kexin.com.cn
2 smd type transistors marking marking j1 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage v (br)dss v gs =0v,i d = 250 a 50 v zero gate voltage drain current v ds =25v,v gs =0 0.1 a v ds =50v,v gs =0 0.5 a gate-source leakage current i gss v gs = 20 v, v ds =0 0.1 a gate-source threshold voltage * v gs(th) v ds =v gs ,i d = 1.0 ma 0.5 1.5 v static drain-to-source on-rresistance * v gs =2.75v,i d <200ma,t a =-40to +85 5.6 10 v gs =5.0v,i d = 200 ma 3.5 forward transconductance * g fs v ds =25v,i d = 200 ma, f = 1.0 khz 100 mmhos input capacitance ciss 40 50 pf output capacitance coss 12 25 pf transfer capacitance crss 3.5 5 pf turn-on delay time t d(on) 20 ns turn-off delay time t d(off) 20 ns *pulsewidth 300 s, duty cycle 2%. v ds =25v,v gs =0,f=1mhz v dd =30v,i d =0.2a i dss r ds(on) www.kexin.com.cn KSS138
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